- Relays[7]
- Resistors[7]
- Transformers[7]
- Integrated Circuits[9]
- Contact Person : Ms. Zhang Lyn
- Company Name : Guangxi Ramway Technology Development Co., Ltd.
- Tel : 86-774-3935123
- Fax : 86-774-3935115
- Address : Guangxi,Wuzhou,Ramway Building,Xingtai Rd.,Industrial Park
- Country/Region : China
- Zip : 543000
Infrared Emitter
Infrared Light Emitting Diode
1.GERERAL DESCRIPTION
DS208 is high output power ALGaAs infrared light emitting diode,mounted in clear epoxy package.It emits
spectrally narrow band of radiation peaking at 940nm.
2.FEATURES
·Wide beam angle.
·Good linearity.
·High output power.
·Capable of pulse operation.
·Low cost.
3.ABSOLUTE MAXIMUM RATINGS AT Ta=25°C
PARAMETER | MAXIMUMRATING | UNIT |
Power forward current | 150 | mW |
Peak forward current | 1 | A |
Continuous Forward Current | 100 | mA |
Reverse voltage | 5 | V |
Operationg temperature range | -40 to 85 | °C |
Storage temperature range | -40 to 85 | °C |
Lead soldering temperature | 260 for 5 seconds | °C |
4.ELECTRICAL OPTICAL CHARACTERISTICS AT Ta=25°C
PARAMETER | SYMBOL | MIN. | TYP. | MAX. | UNIT | TEST CONDITION |
Radiant Intensity | Ee | 8 | 10.2 | IF=20mA | ||
Radiant Intensity | 45 | IF=100mA Pulse Width=100,Duty=1% | ||||
450 | IF=1A Pulse Width=100,Duty=1% | |||||
Peak emission wavelength | λpeak | 940 | nm | IF=20mA | ||
Spectral line half-width | Δλ | 45 | nm | IF=20mA | ||
Forward voltage | VF | 1.2 | 1.4 | V | IF=20mA | |
Forward voltage | 1.4 | 1.5 | V | IF=100mA Pulse Width=100,Duty=1% | ||
2.6 | 4 | V | IF=1A Pulse Width=100,Duty=1% | |||
Reverse current | IR | 10 | µA | VR=5V | ||
Viewing angle | 2θ1/2 | 40 | Deg |
5.TYPICAL ELECTRICAL/OPTICAL CHARACTERISTICS CURVES
(25°C Ambient Temperature Unless Otherwise Noted)
6.DIMENSION IN MM
NOTES
1.All dimensions are in milimeters.
2.Tolerance is ±0.2 unless otherwise noted.
3.An epoxy meniscus may extend about”0.5mm”down the leads.
Infrared Emitter